Using electronic coherence to probe a deeply embedded quantum well in bimetallic Pb/Ag films on Si(111).
نویسندگان
چکیده
We report an experiment in which we utilize electronic coherence to probe a deeply embedded thin film as a quantum well. An atomically uniform Ag film prepared on Si(111) was covered by Pb films up to 70 A thick, and the resulting electronic structure was examined by angle-resolved photoemission spectroscopy. Despite a photoemission escape depth of just a few Angströms and an incommensurate Pb/Ag interface, the data reveal a striking Fabry-Pérot-like structure characteristic of an Ag etalon buried deeply under the Pb overlayers. Our simulations clearly illustrate the manifest coherence of the electronic structures, permitting the characterization of the embedded Ag quantum well.
منابع مشابه
Comment on "thermal stability and electronic structure of atomically uniform Pb films on Si(111)".
Atomically uniform Pb films are successfully prepared on Si(111), despite a large lattice mismatch. Angle-resolved photoemission measurements of the electronic structure show layer-resolved quantum well states which can be correlated with dramatic variations in thermal stability. The odd film thicknesses N = 5, 7, and 9 monolayers show sharp quantum well states. The even film thicknesses N = 6 ...
متن کاملBand structure and oscillatory electron-phonon coupling of Pb thin films determined by atomic-layer-resolved quantum-well states.
Using a low temperature growth method, we have prepared atomically flat Pb thin films over a wide range of film thickness on a Si-(111)-7 x 7 surface. The Pb film morphology and electronic structure are investigated in situ by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. Well-defined and atomic-layer-resolved quantum-well states of the Pb films are used to determ...
متن کاملControlling the effective mass of quantum well states in Pb/Si(111) by interface engineering
The in-plane effective mass of quantum well states in thin Pb films on a Bi reconstructed Si(111) surface is studied by angle-resolved photoemission spectroscopy. It is found that this effective mass is a factor of 3 lower than the unusually high values reported for Pb films grown on a Pb reconstructed Si(111) surface. Through a quantitative low-energy electron diffraction analysis the change i...
متن کاملProbing interface electronic structure with overlayer quantum-well resonances: Al/Si(111).
The dispersion of quantum-well resonances in ultrathin epitaxial Al films on Si(111) reveals energy- and wave vector-dependent reflection properties at the Al/Si interface. The substrate electronic structure strongly influences the phase shift of the electron waves upon reflection at the interface. Thus the details of the substrate electronic structure need to be taken into account for a comple...
متن کاملمحاسبه سطح مشترک (111)Pb/Si با استفاده از نظریه تابعی چگالی
Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Physical review letters
دوره 103 24 شماره
صفحات -
تاریخ انتشار 2009